inchange semiconductor isc product specification isc silicon pnp power transistor BD246/a/b/c description collector current -i c = - 10a collector-emitter breakdown voltage- : v (br)ceo = -45v(min)- BD246; -60v(min)- BD246a -80v(min)- BD246b; -100v(min)- BD246c complement to type bd245/a/b/c applications designed for use in general purpose power amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit BD246 -55 BD246a -70 BD246b -90 v cer collector-emitter voltage (r be = 100 ) BD246c -115 v BD246 -45 BD246a -60 BD246b -80 v ceo collector-emitter voltage BD246c -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -15 a i b b base current -3 a collector power dissipation @ t a =25 3 p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.56 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD246/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BD246 -45 BD246a -60 BD246b -80 v (br)ceo collector-emitter breakdown voltage BD246c i c = -30ma ;i b =0 b -100 v v ce(sat)-1 collector-emitter saturation voltage i c = -3a; i b = -0.3a b -1.0 v v ce(sat)-2 collector-emitter saturation voltage i c = -10a; i b = -2.5a -4.0 v v be( on )-1 base-emitter on voltage i c = -3a ; v ce = -4v -1.6 v v be( on )-2 base-emitter on voltage i c = -10a ; v ce = -4v -3.0 v BD246 v ce = -55v; v be = 0 BD246a v ce = -70v; v be = 0 BD246b v ce = -90v; v be = 0 i ces collector cutoff current BD246c v ce = -115v; v be = 0 -0.4 ma BD246/a v ce = -30v;i b = 0 i ceo collector cutoff current BD246b/c v ce = -60v;i b = 0 -0.7 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -1a ; v ce = -4v 40 h fe-2 dc current gain i c = -3a ; v ce = -4v 20 h fe-3 dc current gain i c = -10a ; v ce = -4v 4 f t current-gain?bandwidth product i c = -0.5a;v ce = -10v,f test = 1.0mhz 3.0 mhz switching times t on turn-on time 0.2 s t off turn-off time i c = -1a; i b1 = -i b2 = -0.1a; r l =20 ; v be(off) = 3.7v 0.8 s isc website www.iscsemi.cn 2
inchange semiconductor isc product specification isc silicon pnp power transistor BD246/a/b/c isc website www.iscsemi.cn
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